BSC030N03LSGATMA1 vs BSC059N04LSGATMA1 Perbandingan

Perbandingan bersamaan detil BSC030N03LSGATMA1 dari Infineon dan BSC059N04LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC030N03LSGATMA1 BSC059N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) @ Tc=25C 100 A —
Continuous Drain Current (Id) @ Ta=25C 23 A —
RDS(on) Max @ VGS=10V 3 mOhm —
RDS(on) Max @ VGS=4.5V [DATA_NEEDED: typical RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (Vgs th) Typ 2.2 V —
Gate Charge (Qg) Typ @ VGS=15V 55 nC —
Output Charge (Qoss) 66 pF —
Input Capacitance (Ciss) Typ 4.3 nF —
Power Dissipation (Pd) @ Ta=25C 2.5 W —
Power Dissipation (Pd) @ Tc=25C 69 W —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Level MSL 1 1 (per JEDEC J-STD-020)
Avalanche Rated Yes (100% tested) —
Technology — OptiMOS 3 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 73 A
Continuous Drain Current (ID, Ta=25C) — 16 A
On-State Resistance RDS(on) max @ VGS=10V — 5.9 mOhm
Power Dissipation (Tc=25C) — 50 W
Power Dissipation (Ta=25C) — 2.5 W
Gate-Source Threshold Voltage VGS(th) — 1.2 V to 2.0 V (typ)
Total Gate Charge Qg — [DATA_NEEDED: Qg total, typical nC]
Rentang Suhu Kerja — -55 C to +150 C
REACH Status — Compliant
Channel Type — N-Channel

Spek dan Sumber

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