BSC030N03LSGATMA1 vs BSC059N04LSGATMA1 Comparison
Detailed side-by-side comparison of BSC030N03LSGATMA1 by Infineon and BSC059N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC030N03LSGATMA1
BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
BSC030N03LSGATMA1 β Active
Specification Comparison
| Parameter | BSC030N03LSGATMA1 | BSC059N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.39 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 100 A | β |
| Continuous Drain Current (Id) @ Ta=25C | 23 A | β |
| RDS(on) Max @ VGS=10V | 3 mOhm | β |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (Vgs th) Typ | 2.2 V | β |
| Gate Charge (Qg) Typ @ VGS=15V | 55 nC | β |
| Output Charge (Qoss) | 66 pF | β |
| Input Capacitance (Ciss) Typ | 4.3 nF | β |
| Power Dissipation (Pd) @ Ta=25C | 2.5 W | β |
| Power Dissipation (Pd) @ Tc=25C | 69 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (100% tested) | β |
| Technology | β | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc=25C) | β | 73 A |
| Continuous Drain Current (ID, Ta=25C) | β | 16 A |
| On-State Resistance RDS(on) max @ VGS=10V | β | 5.9 mOhm |
| Power Dissipation (Tc=25C) | β | 50 W |
| Power Dissipation (Ta=25C) | β | 2.5 W |
| Gate-Source Threshold Voltage VGS(th) | β | 1.2 V to 2.0 V (typ) |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg total, typical nC] |
| Operating Temperature Range | β | -55 C to +150 C |
| REACH Status | β | Compliant |
| Channel Type | β | N-Channel |