BSC030N03LSGATMA1 vs BSC059N04LSGATMA1 Comparison

Detailed side-by-side comparison of BSC030N03LSGATMA1 by Infineon and BSC059N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC030N03LSGATMA1 BSC059N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) @ Tc=25C 100 A —
Continuous Drain Current (Id) @ Ta=25C 23 A —
RDS(on) Max @ VGS=10V 3 mOhm —
RDS(on) Max @ VGS=4.5V [DATA_NEEDED: typical RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (Vgs th) Typ 2.2 V —
Gate Charge (Qg) Typ @ VGS=15V 55 nC —
Output Charge (Qoss) 66 pF —
Input Capacitance (Ciss) Typ 4.3 nF —
Power Dissipation (Pd) @ Ta=25C 2.5 W —
Power Dissipation (Pd) @ Tc=25C 69 W —
Operating Junction Temperature -55C to +150C —
Package PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 1 (per JEDEC J-STD-020)
Avalanche Rated Yes (100% tested) —
Technology — OptiMOS 3 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 73 A
Continuous Drain Current (ID, Ta=25C) — 16 A
On-State Resistance RDS(on) max @ VGS=10V — 5.9 mOhm
Power Dissipation (Tc=25C) — 50 W
Power Dissipation (Ta=25C) — 2.5 W
Gate-Source Threshold Voltage VGS(th) — 1.2 V to 2.0 V (typ)
Total Gate Charge Qg — [DATA_NEEDED: Qg total, typical nC]
Operating Temperature Range — -55 C to +150 C
REACH Status — Compliant
Channel Type — N-Channel

Datasheets & Resources

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