BSC030N08NS5ATMA1 vs BSC0504NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSC030N08NS5ATMA1 dari Infineon dan BSC0504NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC030N08NS5ATMA1 BSC0504NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Type N-Channel Power MOSFET —
Technology OptiMOS 5 —
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (ID,pulse) 161 A —
Gate-Source Voltage (VGS) max +/-20 V —
RDS(on) max at VGS=10 V 3.0 mOhm —
RDS(on) max at VGS=7 V [DATA_NEEDED: RDS(on) at VGS=7V] —
Power Dissipation (Ta=25C, 1.5mm FR4) 2.5 W —
Power Dissipation (TC=25C) 139 W —
Operating Temperature Range (TJ) -55C to +150C —
Paket PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-6
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant unknown
Bebas Halogen Yes —
Lead-Free Yes —
Gate Drive Logic Standard 10V, compatible with 12V drive —
Optimized Application Synchronous Rectification —
Tipe Transistor — N-channel MOSFET
Drain-to-Source Voltage — 30 V
Continuous Drain Current at Ta — 21 A
Continuous Drain Current at Tc — 72 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Technology Family — OptiMOS 5
Jumlah Pin — 8 pins
Exposed Pad — Yes, according to distributor package description
On-State Resistance — [DATA_NEEDED: on-state resistance]
Gate Charge — [DATA_NEEDED: gate charge]
Tegangan Batas Gerbang — [DATA_NEEDED: gate threshold voltage]
Tahanan Panas — [DATA_NEEDED: thermal resistance]
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
AEC-Q100 Qualification — [DATA_NEEDED: AEC-Q100 qualification]
Lead-Free Status — unknown
Halogen-Free Status — unknown
REACH Status — unknown

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