BSC030N08NS5ATMA1 vs BSC0504NSIATMA1 比較

詳細並排比較 BSC030N08NS5ATMA1 由 Infineon 與 BSC0504NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC030N08NS5ATMA1 BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC030N08NS5ATMA1 ✓ 啟用中

規格比較

參數 BSC030N08NS5ATMA1 BSC0504NSIATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Product Type N-Channel Power MOSFET —
Technology OptiMOS 5 —
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (ID,pulse) 161 A —
Gate-Source Voltage (VGS) max +/-20 V —
RDS(on) max at VGS=10 V 3.0 mOhm —
RDS(on) max at VGS=7 V [DATA_NEEDED: RDS(on) at VGS=7V] —
Power Dissipation (Ta=25C, 1.5mm FR4) 2.5 W —
Power Dissipation (TC=25C) 139 W —
Operating Temperature Range (TJ) -55C to +150C —
封裝 PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-6
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (per JEDEC J-STD-020) —
RoHS 狀態 Compliant unknown
無鹵素 Yes —
Lead-Free Yes —
Gate Drive Logic Standard 10V, compatible with 12V drive —
Optimized Application Synchronous Rectification —
電晶體類型 — N-channel MOSFET
Drain-to-Source Voltage — 30 V
Continuous Drain Current at Ta — 21 A
Continuous Drain Current at Tc — 72 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Technology Family — OptiMOS 5
腳位數 — 8 pins
Exposed Pad — Yes, according to distributor package description
On-State Resistance — [DATA_NEEDED: on-state resistance]
Gate Charge — [DATA_NEEDED: gate charge]
閘極臨界電壓 — [DATA_NEEDED: gate threshold voltage]
熱阻 — [DATA_NEEDED: thermal resistance]
工作溫度範圍 — [DATA_NEEDED: operating temperature range]
AEC-Q100 Qualification — [DATA_NEEDED: AEC-Q100 qualification]
Lead-Free Status — unknown
Halogen-Free Status — unknown
REACH Status — unknown

資料表與資源

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