BSC034N06NSATMA1 vs BSC066N06NSATMA1 Perbandingan
Perbandingan bersamaan detil BSC034N06NSATMA1 dari Infineon dan BSC066N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC034N06NSATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 256 A |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | 1.7 V (typ) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | 26 nC (typ) |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 74 W | — |
| Rentang Suhu Kerja | -55C to +150C | — |
| Technology | OptiMOS 5 | OptiMOS 5 60 V trench-gate |
| Paket | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (TDSON EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL level] | 1 |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| Suhu Hubung Kerja | — | -55°C to +150°C |