BSC036NE7NS3GATMA1 vs BSC0902NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC036NE7NS3GATMA1 dari Infineon dan BSC0902NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC036NE7NS3GATMA1 BSC0902NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 75 V 30 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Pulsed Drain Current (IDM) 400 A —
On-Resistance (RDS(on) max @ VGS=10V) 3.6 mOhm —
Gate Threshold Voltage (VGS(th) typ) 2.6 V [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg typ @ VGS=10V) 45 nC —
Rise Time (tr typ) 13 ns —
Fall Time (tf typ) 11 ns —
Power Dissipation (PD max, Tc=25C) 156 W —
Power Dissipation (Ta=25C) 2.5 W —
Thermal Resistance, Junction-to-Case (RthJC) 0.8 C/W —
Rentang Suhu Kerja -55C to +175C -55C to +150C (Tj)
Paket PG-TDSON-8-7 (5x6 mm) PG-TDSON-8-6 (SuperSO8)
Tipe Mounting Surface Mount Surface Mount
Status RoHS ROHS3 Compliant —
Level MSL 1 —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Bebas Halogen — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon