BSC036NE7NS3GATMA1 vs BSC0902NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC036NE7NS3GATMA1 disebabkan oleh Infineon dan BSC0902NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC036NE7NS3GATMA1 BSC0902NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 75 V 30 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Pulsed Drain Current (IDM) 400 A —
On-Resistance (RDS(on) max @ VGS=10V) 3.6 mOhm —
Gate Threshold Voltage (VGS(th) typ) 2.6 V [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg typ @ VGS=10V) 45 nC —
Rise Time (tr typ) 13 ns —
Fall Time (tf typ) 11 ns —
Power Dissipation (PD max, Tc=25C) 156 W —
Power Dissipation (Ta=25C) 2.5 W —
Thermal Resistance, Junction-to-Case (RthJC) 0.8 C/W —
Gambaran Suhu Operasi -55C to +175C -55C to +150C (Tj)
Kemasan PG-TDSON-8-7 (5x6 mm) PG-TDSON-8-6 (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS ROHS3 Compliant —
Aras MSL 1 —
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Boson Bebas — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

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