BSC036NE7NS3GATMA1 vs BSC0902NSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC036NE7NS3GATMA1 sa pamamagitan ng Infineon at BSC0902NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSC036NE7NS3GATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 75 V 30 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Pulsed Drain Current (IDM) 400 A —
On-Resistance (RDS(on) max @ VGS=10V) 3.6 mOhm —
Gate Threshold Voltage (VGS(th) typ) 2.6 V [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg typ @ VGS=10V) 45 nC —
Rise Time (tr typ) 13 ns —
Fall Time (tf typ) 11 ns —
Power Dissipation (PD max, Tc=25C) 156 W —
Power Dissipation (Ta=25C) 2.5 W —
Thermal Resistance, Junction-to-Case (RthJC) 0.8 C/W —
Hanay ng Temperature na Operasyon -55C to +175C -55C to +150C (Tj)
Packhaging PG-TDSON-8-7 (5x6 mm) PG-TDSON-8-6 (SuperSO8)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS ROHS3 Compliant —
Level ng MSL 1 —
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Wala sa Halogen — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

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