BSC039N06NSATMA1 vs BSC014N06NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC039N06NSATMA1 dari Infineon dan BSC014N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC039N06NSATMA1 BSC014N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at TA 19 A —
Continuous Drain Current (ID) at TC 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value at TC] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 3.9 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
Power Dissipation at TA (PD) 2.5 W —
Power Dissipation at TC (PD) 69 W —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8-6 (TDSON EP, 5x6 mm) PG-TDSON-8-17 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Gate Drive Voltage (VGS) ±20 V max —
Technology OptiMOS 5 (TrenchFET-style) OptiMOS 5 (shielded-gate trench)
Level MSL [DATA_NEEDED: MSL rating] 1
Status RoHS Compliant Compliant
Product Family — OptiMOS 5
Gate-Source Voltage (VGS) Max — +/- 20 V
Continuous Drain Current (ID) at Ta — 30 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Typ @ VGS=10V — 1.4 mOhm
On-Resistance RDS(on) Max @ VGS=10V — 1.45 mOhm
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 156 W
Rentang Suhu Kerja — -55C to +150C

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