BSC039N06NSATMA1 vs BSZ060NE2LSATMA1 Perbandingan

Perbandingan bersamaan detil BSC039N06NSATMA1 dari Infineon dan BSZ060NE2LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC039N06NSATMA1 BSZ060NE2LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V 25 V
Continuous Drain Current (ID) at TA 19 A —
Continuous Drain Current (ID) at TC 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value at TC] 44 A
On-Resistance RDS(on) max at VGS=10V 3.9 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
Power Dissipation at TA (PD) 2.5 W —
Power Dissipation at TC (PD) 69 W —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8-6 (TDSON EP, 5x6 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Gate Drive Voltage (VGS) ±20 V max —
Technology OptiMOS 5 (TrenchFET-style) OptiMOS™ (N-Channel Trench MOSFET)
Level MSL [DATA_NEEDED: MSL rating] 1
Status RoHS Compliant Compliant
Part Number — BSZ060NE2LSATMA1
Continuous Drain Current (ID) @ Ta=25C — 12 A
Continuous Drain Current (ID) @ Tc=25C — 44 A
On-Resistance RDS(on) max @ VGS=10V — 6 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) @ VGS=4.5V]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 26 W
Rentang Suhu Kerja — -55C to +150C
Shipping Packaging — Tape & Reel

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