BSC039N06NSATMA1 vs IPD031N06L3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC039N06NSATMA1 dari Infineon dan IPD031N06L3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC039N06NSATMA1 IPD031N06L3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 OptiMOS 3
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA 19 A —
Continuous Drain Current (ID) at TC 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value at TC] 400 A
On-Resistance RDS(on) max at VGS=10V 3.9 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
Power Dissipation at TA (PD) 2.5 W —
Power Dissipation at TC (PD) 69 W —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8-6 (TDSON EP, 5x6 mm) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Gate Drive Voltage (VGS) ±20 V max —
Technology OptiMOS 5 (TrenchFET-style) MOSFET (Metal Oxide)
Level MSL [DATA_NEEDED: MSL rating] 1 (Unlimited)
Status RoHS Compliant Compliant
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 100 A
Maximum Power Dissipation (PD) at TC=25°C — 167 W
RDS(on) Max at VGS=10V — 3.1 mΩ
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.2 V
Gate Drive Voltage (Max RDS(on)) — 4.5 V, 10 V
Total Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typical value]
Rentang Suhu Kerja — -55°C to +175°C

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