BSC040N08NS5ATMA1 vs BSC0902NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC040N08NS5ATMA1 dari Infineon dan BSC0902NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC040N08NS5ATMA1 BSC0902NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC040N08NS5ATMA1 —
Technology OptiMOS 5 (N-channel trench MOSFET) —
Drain-Source Voltage (VDS) 80 V 30 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Maximum Drain Current (ID, Tc=25C, package-limited) 121 A —
On-Resistance (RDS(on) max, VGS=10V) 4 mOhm —
Power Dissipation (Ta=25C, 1in² PCB) 2.5 W —
Power Dissipation (Tc=25C) 104 W —
Paket PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8-6 (SuperSO8)
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55 C to +175 C —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Status RoHS Compliant —
Level MSL 1 —
Primary Application Synchronous rectification in telecom and server power supplies —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Rentang Suhu Kerja — -55C to +150C (Tj)
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Bebas Halogen — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

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