BSC040N10NS5ATMA1 vs BSC030N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC040N10NS5ATMA1 dari Infineon dan BSC030N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC040N10NS5ATMA1 BSC030N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 OptiMOS 5
Drain-Source Voltage (VDS) 100 V —
Maximum On-Resistance (RDS(on)) 4 mOhm —
Continuous Drain Current (ID) at TC=25C 100 A 100 A
Continuous Drain Current (ID) max 136 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 139 W —
Paket PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 PG-TDSON-8-7 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Output Capacitance Reduction Up to 44% vs previous generation —
RDS(on) Reduction Up to 43% vs previous generation —
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 (per Infineon OptiMOS 5 family) —
Manufacturer — Infineon Technologies
Product Type — N-Channel Power MOSFET
Drain-Source Voltage (VDS) max — 80 V
Pulsed Drain Current (ID,pulse) — 161 A
Gate-Source Voltage (VGS) max — +/-20 V
RDS(on) max at VGS=10 V — 3.0 mOhm
RDS(on) max at VGS=7 V — [DATA_NEEDED: RDS(on) at VGS=7V]
Power Dissipation (Ta=25C, 1.5mm FR4) — 2.5 W
Power Dissipation (TC=25C) — 139 W
Operating Temperature Range (TJ) — -55C to +150C
Level MSL — 1 (per JEDEC J-STD-020)
Bebas Halogen — Yes
Lead-Free — Yes
Gate Drive Logic — Standard 10V, compatible with 12V drive
Optimized Application — Synchronous Rectification

Spek dan Sumber

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