BSC047N08NS3GATMA1 vs BSC010NE2LSIATMA1 Perbandingan
Perbandingan bersamaan detil BSC047N08NS3GATMA1 dari Infineon dan BSC010NE2LSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC047N08NS3GATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC047N08NS3GATMA1 | — |
| Technology | OptiMOS™ 3 (N-channel trench) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Continuous Drain Current (ID) at Ta | 18 A | — |
| On-Resistance RDS(on) max | 4.7 mOhm at VGS=10 V | — |
| Power Dissition (Tc) | 125 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Gate Threshold Voltage (VGS th) | Normal level (typ 1.7 V) | — |
| Avalanche Rated | 100% tested | — |
| Paket | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-7 (TDSON-8 EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +175 °C (Tj) | -55C to +150C (TJ) |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free | — |
| Series / Family | — | OptiMOS 25V |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 96 W |
| Configuration | — | Single N-Channel |
| Jumlah Pin | — | 8 |
| Status RoHS | — | Compliant |
| Gate Drive | — | Logic-level compatible |
| Level MSL | — | [DATA_NEEDED: MSL rating] |
| Rds(on) at 10V | — | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | — | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |