BSC047N08NS3GATMA1 vs BSC010NE2LSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC047N08NS3GATMA1 disebabkan oleh Infineon dan BSC010NE2LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC047N08NS3GATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC047N08NS3GATMA1 | — |
| Technology | OptiMOS™ 3 (N-channel trench) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Continuous Drain Current (ID) at Ta | 18 A | — |
| On-Resistance RDS(on) max | 4.7 mOhm at VGS=10 V | — |
| Power Dissition (Tc) | 125 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Gate Threshold Voltage (VGS th) | Normal level (typ 1.7 V) | — |
| Avalanche Rated | 100% tested | — |
| Kemasan | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-7 (TDSON-8 EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 °C to +175 °C (Tj) | -55C to +150C (TJ) |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free | — |
| Series / Family | — | OptiMOS 25V |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 96 W |
| Configuration | — | Single N-Channel |
| Kiraan Pin | — | 8 |
| Status RoHS | — | Compliant |
| Gate Drive | — | Logic-level compatible |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |
| Rds(on) at 10V | — | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | — | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |