BSC0504NSIATMA1 vs BSC030N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC0504NSIATMA1 dari Infineon dan BSC030N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0504NSIATMA1 BSC030N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-channel MOSFET —
Drain-to-Source Voltage 30 V —
Continuous Drain Current at Ta 21 A —
Continuous Drain Current at Tc 72 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 30 W —
Technology Family OptiMOS 5 —
Paket PG-TDSON-8-6 PG-TDSON-8-7 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 pins —
Exposed Pad Yes, according to distributor package description —
On-State Resistance [DATA_NEEDED: on-state resistance] —
Gate Charge [DATA_NEEDED: gate charge] —
Tegangan Batas Gerbang [DATA_NEEDED: gate threshold voltage] —
Tahanan Panas [DATA_NEEDED: thermal resistance] —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] —
AEC-Q100 Qualification [DATA_NEEDED: AEC-Q100 qualification] —
Status RoHS unknown Compliant
Lead-Free Status unknown —
Halogen-Free Status unknown —
REACH Status unknown —
Manufacturer — Infineon Technologies
Product Type — N-Channel Power MOSFET
Technology — OptiMOS 5
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (ID,pulse) — 161 A
Gate-Source Voltage (VGS) max — +/-20 V
RDS(on) max at VGS=10 V — 3.0 mOhm
RDS(on) max at VGS=7 V — [DATA_NEEDED: RDS(on) at VGS=7V]
Power Dissipation (Ta=25C, 1.5mm FR4) — 2.5 W
Power Dissipation (TC=25C) — 139 W
Operating Temperature Range (TJ) — -55C to +150C
Level MSL — 1 (per JEDEC J-STD-020)
Bebas Halogen — Yes
Lead-Free — Yes
Gate Drive Logic — Standard 10V, compatible with 12V drive
Optimized Application — Synchronous Rectification

Spek dan Sumber

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