BSC0504NSIATMA1 vs IPD090N03LGATMA1 Perbandingan
Perbandingan bersamaan detil BSC0504NSIATMA1 dari Infineon dan IPD090N03LGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC0504NSIATMA1 | IPD090N03LGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-channel MOSFET | — |
| Drain-to-Source Voltage | 30 V | — |
| Continuous Drain Current at Ta | 21 A | — |
| Continuous Drain Current at Tc | 72 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Technology Family | OptiMOS 5 | OptiMOS 30V |
| Paket | PG-TDSON-8-6 | PG-TO252-3-11 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 pins | — |
| Exposed Pad | Yes, according to distributor package description | — |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| Tegangan Batas Gerbang | [DATA_NEEDED: gate threshold voltage] | — |
| Tahanan Panas | [DATA_NEEDED: thermal resistance] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -55C to +175C (junction) |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Status RoHS | unknown | Compliant |
| Lead-Free Status | unknown | — |
| Halogen-Free Status | unknown | — |
| REACH Status | unknown | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 40 A |
| Continuous Drain Current (Id) @ Tc=100C | — | [DATA_NEEDED: Id at 100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed Id] |
| Maximum Power Dissipation (Pd) @ Tc=25C | — | 42 W |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | — | 9 mOhm (typical) |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | — | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Level MSL | — | 1 (unlimited) |
| Configuration | — | Single |