BSC066N06NSATMA1 vs BSC0901NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC066N06NSATMA1 dari Infineon dan BSC0901NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC066N06NSATMA1 BSC0901NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 64 A —
Continuous Drain Current (ID) at TC=100°C 45 A —
Pulsed Drain Current (IDM) 256 A —
Gate-Source Voltage (VGS) max ±20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 6.6 mΩ (max) —
Gate Threshold Voltage (VGS(th)) 1.7 V (typ) [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) 26 nC (typ) —
Power Dissipation (PD) at TC=25°C 46 W —
Power Dissipation (PD) at TA=25°C 2.5 W —
Thermal Resistance, Junction-to-Case (RθJC) 1.3 °C/W —
Suhu Hubung Kerja -55°C to +150°C —
Paket PG-TDSON-8-6 (TDSON EP) TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 —
Status RoHS Compliant Compliant
Technology OptiMOS 5 60 V trench-gate N-Channel Trench MOSFET (OptiMOS)
Manufacturer — Infineon Technologies
Part Family — OptiMOS 30V
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
Rentang Suhu Kerja — -55C to +150C
Tingkat Sensitivitas Kekeringan (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon