BSC066N06NSATMA1 vs BSC0901NSATMA1 比較
詳細並排比較 BSC066N06NSATMA1 由 Infineon 與 BSC0901NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC066N06NSATMA1 | BSC0901NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 64 A | — |
| Continuous Drain Current (ID) at TC=100°C | 45 A | — |
| Pulsed Drain Current (IDM) | 256 A | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 6.6 mΩ (max) | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | 26 nC (typ) | — |
| Power Dissipation (PD) at TC=25°C | 46 W | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Thermal Resistance, Junction-to-Case (RθJC) | 1.3 °C/W | — |
| 工作接面溫度 | -55°C to +150°C | — |
| 封裝 | PG-TDSON-8-6 (TDSON EP) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | — |
| RoHS 狀態 | Compliant | Compliant |
| Technology | OptiMOS 5 60 V trench-gate | N-Channel Trench MOSFET (OptiMOS) |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| 工作溫度範圍 | — | -55C to +150C |
| 濕度敏感等級 (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |