BSC066N06NSATMA1 vs BSC0901NSATMA1 Comparison

Detailed side-by-side comparison of BSC066N06NSATMA1 by Infineon and BSC0901NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC066N06NSATMA1 BSC0901NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 64 A —
Continuous Drain Current (ID) at TC=100°C 45 A —
Pulsed Drain Current (IDM) 256 A —
Gate-Source Voltage (VGS) max ±20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 6.6 mΩ (max) —
Gate Threshold Voltage (VGS(th)) 1.7 V (typ) [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) 26 nC (typ) —
Power Dissipation (PD) at TC=25°C 46 W —
Power Dissipation (PD) at TA=25°C 2.5 W —
Thermal Resistance, Junction-to-Case (RθJC) 1.3 °C/W —
Operating Junction Temperature -55°C to +150°C —
Package PG-TDSON-8-6 (TDSON EP) TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
Mounting Type Surface Mount Surface Mount
MSL Level 1 —
RoHS Status Compliant Compliant
Technology OptiMOS 5 60 V trench-gate N-Channel Trench MOSFET (OptiMOS)
Manufacturer — Infineon Technologies
Part Family — OptiMOS 30V
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
Operating Temperature Range — -55C to +150C
Moisture Sensitivity Level (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

Datasheets & Resources

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