BSC070N10NS5ATMA1 vs BSC097N06NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC070N10NS5ATMA1 dari Infineon dan BSC097N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC070N10NS5ATMA1 BSC097N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench) OptiMOS 5 (Trench)
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at TC=25C 80 A —
RDS(on) max @ VGS=10V 7 mOhm —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Power Dissition at TC=25C (Ptot) 83 W —
Power Dissipation at TA=25C 2.5 W —
Rentang Suhu Hubung Kerja -55 C to +150 C —
Paket PG-TDSON-8-7 (SuperSO8 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) 1 (Unlimited)
Status RoHS Compliant Compliant
Lead-Free Yes —
Typical Application Synchronous rectification in SMPS —
Manufacturer — Infineon Technologies
Series — OptiMOS 5
Part Status — Active
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 46 A
Continuous Drain Current (ID) at Ta=25C — [DATA_NEEDED: ID at Ta=25C PCB-mounted]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM peak value]
RDS(on) max at VGS=10 V — 9.7 mOhm
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg typ) — [DATA_NEEDED: total gate charge Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 36 W
Suhu Hubung Kerja — -55C to +150C
Paket / Case — PG-TDSON-8-6 (SuperSO8 5x6 mm)
Avalanche Rated — Yes (EAS per datasheet)

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