BSC070N10NS5ATMA1 vs IPT015N10NF2SATMA1 Perbandingan
Perbandingan bersamaan detil BSC070N10NS5ATMA1 dari Infineon dan IPT015N10NF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC070N10NS5ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS trench, N-channel enhancement |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 80 A | — |
| RDS(on) max @ VGS=10V | 7 mOhm | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| Power Dissition at TC=25C (Ptot) | 83 W | — |
| Power Dissipation at TA=25C | 2.5 W | — |
| Rentang Suhu Hubung Kerja | -55 C to +150 C | — |
| Paket | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-HSOF-8-10 (9-pin, 8+tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Typical Application | Synchronous rectification in SMPS | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 315 A |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| Rentang Suhu Kerja | — | -55 °C to +175 °C |
| Gate Drive Voltage (typ) | — | 10 V |
| Energi Pulsa Tandai | — | [DATA_NEEDED: EAS value] |