BSC076N06NS3GATMA1 vs BSC060N10NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC076N06NS3GATMA1 dari Infineon dan BSC060N10NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC060N10NS3GATMA1 BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon

BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon

BSC060N10NS3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC076N06NS3GATMA1 BSC060N10NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel Trench MOSFET OptiMOS 3 (Trench MOSFET)
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) at TC=25C 50 A —
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ —
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
Rentang Suhu Kerja -55C to +150C —
Paket PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
RoHS Compliance Compliant —
Bebas Halogen Yes (per Infineon product page) [DATA_NEEDED: halogen status]
Part Family — OptiMOS 3
FET Type — N-Channel
Continuous Drain Current (ID, Ta) — 14.9 A
Continuous Drain Current (ID, Tc) — 90 A
On-Resistance RDS(on) Max @ VGS=10V — 6 mOhm
Power Dissipation (PD, Tc=25C) — 125 W
Gate Threshold Voltage VGS(th) — 2.0 V to 3.5 V
Suhu Hubung Kerja — -55 C to +150 C
Status RoHS — Compliant
Lead-Free — Yes
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss value]
Avalanche Energy (EAS) — [DATA_NEEDED: EAS value]

Spek dan Sumber

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