BSC084P03NS3GATMA1 vs BSP316PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSC084P03NS3GATMA1 dari Infineon dan BSP316PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC084P03NS3GATMA1 BSP316PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (Ta) 14.9 A —
Continuous Drain Current (Tc) 78.6 A —
Rds(on) max @ VGS = -10 V 6.1 mOhm —
Rds(on) max @ VGS = -2.5 V [DATA_NEEDED: Rds(on) at 2.5V] —
Gate Threshold Voltage (VGS(th) typ) -1.7 V —
Total Gate Charge (Qg) 58 nC @ VGS = -10 V —
Input Capacitance (Ciss) 3.19 nF —
Output Capacitance (Coss) 110 pF —
Reverse Transfer Capacitance (Crss) 1.52 nF —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
Rentang Suhu Kerja -55C to +150C -55 C to +150 C (junction)
Paket PG-TDSON-8-5 (SuperSO8 5x6) PG-SOT223-4 (TO-261-4)
Tipe Mounting Surface Mount Surface Mount
Technology Family OptiMOS P3 —
Status RoHS Compliant Compliant
Level MSL 1 (unlimited) 1
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TA=25C — -680 mA
Total Power Dissipation (Ptot) at TA=25C — 1.8 W
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Jumlah Pin — 3 + thermal tab
Channel Mode — Enhancement
Technology — SIPMOS (P-channel MOSFET)
Packaging — Tape & Reel (H6327 suffix)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon