BSC0901NSATMA1 vs BSC022N04LS6ATMA1 Perbandingan
Perbandingan bersamaan detil BSC0901NSATMA1 dari Infineon dan BSC022N04LS6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC0901NSATMA1 | BSC022N04LS6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 30V | — |
| Technology | N-Channel Trench MOSFET (OptiMOS) | OptiMOS™ 6 (N-channel trench) |
| Drain-to-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A |
| Continuous Drain Current (ID) at Ta | 28 A | 27 A |
| On-State Resistance RDS(on) Max at VGS=10V | 1.9 mOhm | — |
| On-State Resistance RDS(on) Typ at VGS=10V | [DATA_NEEDED: RDS(on) typical] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg total] | — |
| Avalanche Energy (EAS) | 80 mJ | — |
| Power Dissipation (PD) at Tc | 69 W | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Rentang Suhu Kerja | -55C to +150C | — |
| Paket | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm | SuperSO8 5x6 (PG-TDSON-8-1) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Tingkat Sensitivitas Kekeringan (MSL) | 1 | — |
| Built-in Body Diode | Yes | — |
| Status RoHS | Compliant | Compliant |
| Configuration | Single N-Channel with Built-in Diode | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Maximum Pulsed Drain Current (IDM) | — | 139 A |
| On-Resistance RDS(on) max | — | 2.2 mOhm at VGS=10 V |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 79 W |
| Channel Type | — | N-Channel |
| Jumlah Pin | — | 8 |
| Suhu Kerja | — | -55 C to +175 C (junction) |