BSC0901NSIATMA1 vs BSC155N06NDATMA1 Perbandingan

Perbandingan bersamaan detil BSC0901NSIATMA1 dari Infineon dan BSC155N06NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0901NSIATMA1 BSC155N06NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 25V N-Channel Power MOSFET OptiMOS 3 (N-channel trench)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-State Resistance (RDS(on)) at VGS=10V 2.0 mOhm typical —
On-State Resistance (RDS(on)) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage (VGS(th)) 2.2 V max —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge nC] —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc 69 W —
Rentang Suhu Kerja -55 C to +150 C -55 C to +175 C
Paket PG-TDSON-8-6 (5x6 mm with exposed pad) PG-TDSON-8-4 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Level MSL 1 1
Status RoHS Compliant Compliant (Pb-free plating)
Bebas Halogen Yes —
Manufacturer — Infineon Technologies
Part Number — BSC155N06NDATMA1
Configuration — Dual N-channel MOSFET array
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 20 A
On-State Resistance RDS(on) max at VGS=10V — 15.5 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (Tc=25C) — 50 W
Lead-Free Plating — Yes
Shoot-Through Immunity Qgd/Qgs — < 0.8

Spek dan Sumber

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