BSC0901NSIATMA1 vs BSC155N06NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0901NSIATMA1 disebabkan oleh Infineon dan BSC155N06NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0901NSIATMA1 BSC155N06NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 25V N-Channel Power MOSFET OptiMOS 3 (N-channel trench)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-State Resistance (RDS(on)) at VGS=10V 2.0 mOhm typical —
On-State Resistance (RDS(on)) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage (VGS(th)) 2.2 V max —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge nC] —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc 69 W —
Gambaran Suhu Operasi -55 C to +150 C -55 C to +175 C
Kemasan PG-TDSON-8-6 (5x6 mm with exposed pad) PG-TDSON-8-4 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Aras MSL 1 1
Status RoHS Compliant Compliant (Pb-free plating)
Boson Bebas Yes —
Manufacturer — Infineon Technologies
Part Number — BSC155N06NDATMA1
Configuration — Dual N-channel MOSFET array
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 20 A
On-State Resistance RDS(on) max at VGS=10V — 15.5 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (Tc=25C) — 50 W
Lead-Free Plating — Yes
Shoot-Through Immunity Qgd/Qgs — < 0.8

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