BSC0902NSATMA1 vs BSC036NE7NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC0902NSATMA1 dari Infineon dan BSC036NE7NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0902NSATMA1 BSC036NE7NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 75 V
Continuous Drain Current (ID, Ta) 24 A —
Pulsed Drain Current (IDM, Tc) 100 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 48 W —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] 2.6 V
RDS(on) @ VGS=10V max [DATA_NEEDED: RDS(on) at VGS=10V] —
RDS(on) @ VGS=4.5V max [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Total Gate Charge (Qg typ) [DATA_NEEDED: Qg typical] —
Rentang Suhu Kerja -55C to +150C (Tj) -55C to +175C
Paket PG-TDSON-8-6 (SuperSO8) PG-TDSON-8-7 (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Qualification JEDEC qualified for target applications —
RoHS Compliance Compliant (Pb-free lead plating) —
Bebas Halogen Yes, per IEC 61249-2-21 —
Avalanche Rated Yes (100% avalanche tested) —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
FET Type — N-Channel
Continuous Drain Current (ID, Tc=25C) — 100 A
Pulsed Drain Current (IDM) — 400 A
On-Resistance (RDS(on) max @ VGS=10V) — 3.6 mOhm
Total Gate Charge (Qg typ @ VGS=10V) — 45 nC
Rise Time (tr typ) — 13 ns
Fall Time (tf typ) — 11 ns
Power Dissipation (PD max, Tc=25C) — 156 W
Power Dissipation (Ta=25C) — 2.5 W
Thermal Resistance, Junction-to-Case (RthJC) — 0.8 C/W
Status RoHS — ROHS3 Compliant
Level MSL — 1

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