BSC0902NSATMA1 vs BSC036NE7NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0902NSATMA1 disebabkan oleh Infineon dan BSC036NE7NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0902NSATMA1 BSC036NE7NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 75 V
Continuous Drain Current (ID, Ta) 24 A —
Pulsed Drain Current (IDM, Tc) 100 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 48 W —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] 2.6 V
RDS(on) @ VGS=10V max [DATA_NEEDED: RDS(on) at VGS=10V] —
RDS(on) @ VGS=4.5V max [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Total Gate Charge (Qg typ) [DATA_NEEDED: Qg typical] —
Gambaran Suhu Operasi -55C to +150C (Tj) -55C to +175C
Kemasan PG-TDSON-8-6 (SuperSO8) PG-TDSON-8-7 (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Qualification JEDEC qualified for target applications —
RoHS Compliance Compliant (Pb-free lead plating) —
Boson Bebas Yes, per IEC 61249-2-21 —
Avalanche Rated Yes (100% avalanche tested) —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
FET Type — N-Channel
Continuous Drain Current (ID, Tc=25C) — 100 A
Pulsed Drain Current (IDM) — 400 A
On-Resistance (RDS(on) max @ VGS=10V) — 3.6 mOhm
Total Gate Charge (Qg typ @ VGS=10V) — 45 nC
Rise Time (tr typ) — 13 ns
Fall Time (tf typ) — 11 ns
Power Dissipation (PD max, Tc=25C) — 156 W
Power Dissipation (Ta=25C) — 2.5 W
Thermal Resistance, Junction-to-Case (RthJC) — 0.8 C/W
Status RoHS — ROHS3 Compliant
Aras MSL — 1

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