BSC0902NSIATMA1 vs BSC052N08NS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSC0902NSIATMA1 dari Infineon dan BSC052N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC0902NSIATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 30V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TA=25C | 23 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | — |
| Gate Charge QG(0V..10V) | 24 nC | — |
| Output Charge QOSS | 17 nC | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 48 W | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | — |
| Paket | PG-TDSON-8-6 (TDSON-8) | PG-TDSON-8 (SuperSO8) 5x6 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | — |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes | — |
| Part Number | — | BSC052N08NS5ATMA1 |
| Technology | — | OptiMOS 5 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 95 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.2 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage VGS(th) typ | — | 2.5-3.0 V |
| Total Power Dissipation (Tc) | — | 83 W |
| Total Power Dissipation (Ta) | — | 2.5 W |
| Suhu Hubung Kerja | — | -55C to +150C |