BSC0902NSIATMA1 vs BSC052N08NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0902NSIATMA1 disebabkan oleh Infineon dan BSC052N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0902NSIATMA1 BSC052N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 30V —
Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TA=25C 23 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
On-State Resistance RDS(on) Max at VGS=10V 2.8 mOhm —
Gate Charge QG(0V..10V) 24 nC —
Output Charge QOSS 17 nC —
Power Dissipation (TA) 2.5 W —
Power Dissipation (TC) 48 W —
Gambaran Suhu Operasi -55C to +150C (junction) —
Kemasan PG-TDSON-8-6 (TDSON-8) PG-TDSON-8 (SuperSO8) 5x6 mm
Jenis Pemasangan Surface Mount Surface Mount
Built-in Diode Yes (single with built-in diode) —
Aras MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Status RoHS Compliant Compliant
Lead-Free Yes —
Boson Bebas Yes —
Part Number — BSC052N08NS5ATMA1
Technology — OptiMOS 5
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc) — 95 A
On-Resistance RDS(on) max @ VGS=10V — 5.2 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage VGS(th) typ — 2.5-3.0 V
Total Power Dissipation (Tc) — 83 W
Total Power Dissipation (Ta) — 2.5 W
Suhu Hubungan Operasi — -55C to +150C

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