BSC093N15NS5ATMA1 vs IQD005N04NM6CGATMA1 Perbandingan
Perbandingan bersamaan detil BSC093N15NS5ATMA1 dari Infineon dan IQD005N04NM6CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC093N15NS5ATMA1 | IQD005N04NM6CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 5 150V | OptiMOS 6 (trench FET) |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at TC | 87 A | — |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΩ | — |
| Power Dissipation (PD) at TC | 139 W | — |
| Paket | SuperSO8 5x6 (PG-TDSON-8-7) | PG-TTFN-9-U02 (Source-Down 5x6 mm²) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C (TJ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Bebas Halogen | [DATA_NEEDED: halogen free status] | — |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| RDS(on) Typical | — | 0.5 mΩ |
| Continuous Drain Current (ID) at Ta | — | 58 A |
| Continuous Drain Current (ID) at Tc | — | 610 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed rating] |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 333 W |
| Jumlah Pin | — | 9 |
| Lead-Free | — | Yes |
| Source Configuration | — | Source-Down (bottom-side source for PCB heatsinking) |