BSC094N06LS5ATMA1 vs BSC0906NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC094N06LS5ATMA1 dari Infineon dan BSC0906NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC094N06LS5ATMA1 BSC0906NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC094N06LS5ATMA1 —
Technology OptiMOS™ 5 (logic-level) OptiMOS
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at TC=25°C 47 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 9.4 mΩ —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] [DATA_NEEDED: Qg @ VGS=10V]
Power Dissipation (PD) at TC=25°C 36 W —
Suhu Hubung Kerja -55 °C to +150 °C —
Paket PG-TDSON-8-6 (SuperSO8 5x6) PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] —
Continuous Drain Current (ID) at Ta — 18 A
Continuous Drain Current (ID) at Tc — 63 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
RDS(on) max (typical reference) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Rentang Suhu Kerja — -55C to +150C (junction, typical)
Jumlah Pin — 8

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