BSC094N06LS5ATMA1 vs BSC0906NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC094N06LS5ATMA1 disebabkan oleh Infineon dan BSC0906NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC094N06LS5ATMA1 BSC0906NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC094N06LS5ATMA1 —
Technology OptiMOS™ 5 (logic-level) OptiMOS
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at TC=25°C 47 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 9.4 mΩ —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] [DATA_NEEDED: Qg @ VGS=10V]
Power Dissipation (PD) at TC=25°C 36 W —
Suhu Hubungan Operasi -55 °C to +150 °C —
Kemasan PG-TDSON-8-6 (SuperSO8 5x6) PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] —
Continuous Drain Current (ID) at Ta — 18 A
Continuous Drain Current (ID) at Tc — 63 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
RDS(on) max (typical reference) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gambaran Suhu Operasi — -55C to +150C (junction, typical)
Kiraan Pin — 8

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