BSC094N06LS5ATMA1 vs IPD034N06N3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC094N06LS5ATMA1 dari Infineon dan IPD034N06N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC094N06LS5ATMA1 IPD034N06N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC094N06LS5ATMA1 —
Technology OptiMOS™ 5 (logic-level) N-Channel Trench MOSFET (OptiMOS 3)
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 47 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 9.4 mΩ —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25°C 36 W —
Suhu Hubung Kerja -55 °C to +150 °C —
Paket PG-TDSON-8-6 (SuperSO8 5x6) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant (Pb-free green finish)
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Series — OptiMOS 3
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc — 100 A
Maximum Power Dissipation (Ptot) — 167 W
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
Gate Threshold Voltage VGS(th) — 4 V at 93 uA
Gate-Source Voltage (VGS) max — [DATA_NEEDED: max VGS rating]
Pin Configuration — 3-Pin (2 + Tab)
Rentang Suhu Kerja — [DATA_NEEDED: Tj min/max]
Automotive Qualified — Yes (per Infineon product page)

Spek dan Sumber

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