BSC094N06LS5ATMA1 vs IPD034N06N3GATMA1 比較
詳細並排比較 BSC094N06LS5ATMA1 由 Infineon 與 IPD034N06N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC094N06LS5ATMA1 | IPD034N06N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC094N06LS5ATMA1 | — |
| Technology | OptiMOS™ 5 (logic-level) | N-Channel Trench MOSFET (OptiMOS 3) |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 47 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max at VGS=10 V | 9.4 mΩ | — |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25°C | 36 W | — |
| 工作接面溫度 | -55 °C to +150 °C | — |
| 封裝 | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant (Pb-free green finish) |
| MSL 等級 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Maximum Power Dissipation (Ptot) | — | 167 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| Gate Threshold Voltage VGS(th) | — | 4 V at 93 uA |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: max VGS rating] |
| Pin Configuration | — | 3-Pin (2 + Tab) |
| 工作溫度範圍 | — | [DATA_NEEDED: Tj min/max] |
| Automotive Qualified | — | Yes (per Infineon product page) |