BSC094N06LS5ATMA1 vs IPD034N06N3GATMA1 Comparison

Detailed side-by-side comparison of BSC094N06LS5ATMA1 by Infineon and IPD034N06N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Active

Specification Comparison

Parameter BSC094N06LS5ATMA1 IPD034N06N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC094N06LS5ATMA1 —
Technology OptiMOS™ 5 (logic-level) N-Channel Trench MOSFET (OptiMOS 3)
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 47 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 9.4 mΩ —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25°C 36 W —
Operating Junction Temperature -55 °C to +150 °C —
Package PG-TDSON-8-6 (SuperSO8 5x6) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant (Pb-free green finish)
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Series — OptiMOS 3
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc — 100 A
Maximum Power Dissipation (Ptot) — 167 W
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
Gate Threshold Voltage VGS(th) — 4 V at 93 uA
Gate-Source Voltage (VGS) max — [DATA_NEEDED: max VGS rating]
Pin Configuration — 3-Pin (2 + Tab)
Operating Temperature Range — [DATA_NEEDED: Tj min/max]
Automotive Qualified — Yes (per Infineon product page)

Datasheets & Resources

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