BSC098N10NS5ATMA1 vs BSC016N06NSTATMA1 Perbandingan

Perbandingan bersamaan detil BSC098N10NS5ATMA1 dari Infineon dan BSC016N06NSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC098N10NS5ATMA1 BSC016N06NSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc=25C) 60 A 100 A
Continuous Drain Current (ID, Ta) [DATA_NEEDED: ID Ta-rated value] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=10V 9.8 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max +/-] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation (Tc=25C) 69 W —
Power Dissipation (Ta) 2.5 W 3 W
Diode Continuous Forward Current (IS) 63 A (Tc=25C) —
Diode Pulse Current (IS,pulse) 240 A (Tc=25C) —
Diode Forward Voltage (VSD) typ 0.9 V (IF=30 A, Tj=25C) —
Diode Forward Voltage (VSD) max 1.1 V (IF=30 A, Tj=25C) —
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max] -55 C to +150 C
Paket PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Level MSL 1 [DATA_NEEDED: MSL level]
Shipping Packaging Tape & Reel (T/R) —
Manufacturer — Infineon Technologies
Part Number — BSC016N06NSTATMA1
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Ta=25C) — 31 A
On-Resistance RDS(on) max (VGS=10V) — 1.6 mOhm
Power Dissipation (Tc) — 167 W
Lead-Free — Yes
Series — OptiMOS

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