BSC117N08NS5ATMA1 vs BSC023N08NS5SCATMA1 Perbandingan
Perbandingan bersamaan detil BSC117N08NS5ATMA1 dari Infineon dan BSC023N08NS5SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSC117N08NS5ATMA1 | BSC023N08NS5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 | BSC023N08NS5SCATMA1 |
| Technology | OptiMOS 5 | OptiMOS 5 (N-channel trench MOSFET) |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) max | 49 A (Tc) | — |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 50 W | — |
| Paket | PG-TDSON-8-7 (SuperSO8 5x6) | PG-WSON-8-2 (SuperSO8 DSC) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Rentang Suhu Kerja | -55 C to +150 C (typical MOSFET junction) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level MSL | 1 | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 202 A |
| Power Dissipation (PD, Tc=25°C) | — | 188 W |
| On-State Resistance RDS(on) typ. | — | 2.3 mΩ at VGS=10 V, ID=50 A |
| Gate Threshold Voltage VGS(th) typ. | — | 3.8 V |
| Total Gate Charge Qg | — | 98 nC at VGS=10 V |
| Input Capacitance Ciss | — | 6.8 nF |
| Output Capacitance Coss | — | 74 pF |
| Thermal Resistance RthJC | — | 0.72 K/W |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |