BSC117N08NS5ATMA1 vs BSC052N08NS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSC117N08NS5ATMA1 dari Infineon dan BSC052N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC117N08NS5ATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 | BSC052N08NS5ATMA1 |
| Technology | OptiMOS 5 | OptiMOS 5 |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) max | 49 A (Tc) | — |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 50 W | — |
| Paket | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8 (SuperSO8) 5x6 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Rentang Suhu Kerja | -55 C to +150 C (typical MOSFET junction) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level MSL | 1 | 1 (unlimited) |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 95 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.2 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage VGS(th) typ | — | 2.5-3.0 V |
| Total Power Dissipation (Tc) | — | 83 W |
| Total Power Dissipation (Ta) | — | 2.5 W |
| Suhu Hubung Kerja | — | -55C to +150C |