BSC117N08NS5ATMA1 vs BSC052N08NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC117N08NS5ATMA1 disebabkan oleh Infineon dan BSC052N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC117N08NS5ATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 | BSC052N08NS5ATMA1 |
| Technology | OptiMOS 5 | OptiMOS 5 |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) max | 49 A (Tc) | — |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 50 W | — |
| Kemasan | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8 (SuperSO8) 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Gambaran Suhu Operasi | -55 C to +150 C (typical MOSFET junction) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Aras MSL | 1 | 1 (unlimited) |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 95 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.2 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage VGS(th) typ | — | 2.5-3.0 V |
| Total Power Dissipation (Tc) | — | 83 W |
| Total Power Dissipation (Ta) | — | 2.5 W |
| Suhu Hubungan Operasi | — | -55C to +150C |