BSC123N08NS3GATMA1 vs IAUC64N08S5L075ATMA1 Perbandingan
Perbandingan bersamaan detil BSC123N08NS3GATMA1 dari Infineon dan IAUC64N08S5L075ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSC123N08NS3GATMA1 | IAUC64N08S5L075ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| Channel Type | N-Channel | — |
| Configuration | Single with built-in body diode | — |
| Maximum Drain-Source Voltage (VDS) | 80 V | — |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | — |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | — |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | — |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc) | 66 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Suhu Hubung Kerja | -55C to +150C | -55 °C to +175 °C |
| Paket | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant with exemption | — |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Part Number | — | IAUC64N08S5L075ATMA1 |
| Tipe Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS™ 5 |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A (TJ-limited) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 7.5 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage absolute maximum] |
| Power Dissipation (PD) at TC=25°C | — | 75 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |
| Jumlah Pin | — | 8 |