BSC123N08NS3GATMA1 vs IAUC64N08S5L075ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC123N08NS3GATMA1 disebabkan oleh Infineon dan IAUC64N08S5L075ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC123N08NS3GATMA1 | IAUC64N08S5L075ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| Channel Type | N-Channel | — |
| Configuration | Single with built-in body diode | — |
| Maximum Drain-Source Voltage (VDS) | 80 V | — |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | — |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | — |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | — |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc) | 66 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Suhu Hubungan Operasi | -55C to +150C | -55 °C to +175 °C |
| Kemasan | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant with exemption | — |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Part Number | — | IAUC64N08S5L075ATMA1 |
| Jenis Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS™ 5 |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A (TJ-limited) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 7.5 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage absolute maximum] |
| Power Dissipation (PD) at TC=25°C | — | 75 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |
| Bilangan Pin | — | 8 |