BSC123N08NS3GATMA1 vs IAUCN04S7N009ATMA1 Perbandingan

Perbandingan bersamaan detil BSC123N08NS3GATMA1 dari Infineon dan IAUCN04S7N009ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7N009ATMA1 IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC123N08NS3GATMA1 IAUCN04S7N009ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 3 —
Channel Type N-Channel —
Configuration Single with built-in body diode Single N-Channel
Maximum Drain-Source Voltage (VDS) 80 V —
Maximum Continuous Drain Current (ID, Tc) 55 A —
Maximum Continuous Drain Current (ID, Ta) 11 A —
Maximum Pulsed Drain Current [DATA_NEEDED: pulsed drain current] —
Maximum RDS(on) @ VGS=10 V 12.3 mOhm —
Maximum Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation (Tc) 66 W —
Power Dissipation (Ta) 2.5 W —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-34 (Surface Mount)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) 1
Status RoHS Compliant with exemption Compliant
Automotive Qualified Yes (AEC-Q101) —
Series — OptiMOS 7
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D) — 175 A
R_DS(on) Max @ V_GS = 10 V — 0.96 mΩ
Gate Drive Voltage (V_GS) — 10 V
Suhu Kerja — -55C to +175C
Qualification — AEC-Q101 (Automotive)
Supplier Device Package — PG-TDSON-8-34

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