BSC123N08NS3GATMA1 vs IAUCN04S7N009ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC123N08NS3GATMA1 sa pamamagitan ng Infineon at IAUCN04S7N009ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 ✓ Nakahanda
Infineon
IAUCN04S7N009ATMA1 IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC123N08NS3GATMA1 IAUCN04S7N009ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 3 —
Channel Type N-Channel —
Configuration Single with built-in body diode Single N-Channel
Maximum Drain-Source Voltage (VDS) 80 V —
Maximum Continuous Drain Current (ID, Tc) 55 A —
Maximum Continuous Drain Current (ID, Ta) 11 A —
Maximum Pulsed Drain Current [DATA_NEEDED: pulsed drain current] —
Maximum RDS(on) @ VGS=10 V 12.3 mOhm —
Maximum Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation (Tc) 66 W —
Power Dissipation (Ta) 2.5 W —
Temperature ng Junction na Operasyon -55C to +150C —
Packhaging PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-34 (Surface Mount)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) 1
Tindminan RoHS Compliant with exemption Compliant
Automotive Qualified Yes (AEC-Q101) —
Series — OptiMOS 7
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D) — 175 A
R_DS(on) Max @ V_GS = 10 V — 0.96 mΩ
Gate Drive Voltage (V_GS) — 10 V
Temperature na Operasyon — -55C to +175C
Qualification — AEC-Q101 (Automotive)
Supplier Device Package — PG-TDSON-8-34

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