BSC265N10LSFGATMA1 vs BSC027N10NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC265N10LSFGATMA1 dari Infineon dan BSC027N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC265N10LSFGATMA1 BSC027N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif NRND
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 40 A —
Continuous Drain Current (ID, Ta) 6.5 A —
Power Dissipation (PD, Tc) 78 W —
Technology OptiMOS 2 (TrenchFET) OptiMOS 5 (100V)
Paket PG-TDSON-8-1 (TDSON-8) PG-TSON-8-3 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total at VGS=10V] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Rentang Suhu Kerja -55 C to +150 C (junction) [DATA_NEEDED: Tj min/max]
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Lead-Free Yes —
Avalanche Rated Yes —
Series OptiMOS 2 —
Manufacturer — Infineon Technologies
Part Number — BSC027N10NS5ATMA1
Channel Type — N-Channel
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

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