BSC265N10LSFGATMA1 vs BSC034N06NSATMA1 Perbandingan
Perbandingan bersamaan detil BSC265N10LSFGATMA1 dari Infineon dan BSC034N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSC265N10LSFGATMA1 | BSC034N06NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID, Tc) | 40 A | — |
| Continuous Drain Current (ID, Ta) | 6.5 A | — |
| Power Dissipation (PD, Tc) | 78 W | — |
| Technology | OptiMOS 2 (TrenchFET) | OptiMOS 5 |
| Paket | PG-TDSON-8-1 (TDSON-8) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | [DATA_NEEDED: VGS(th)] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total at VGS=10V] | [DATA_NEEDED: Qg] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | -55C to +150C |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| Series | OptiMOS 2 | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 74 W |