BSC265N10LSFGATMA1 vs BSC034N06NSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC265N10LSFGATMA1 sa pamamagitan ng Infineon at BSC034N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSC265N10LSFGATMA1 | BSC034N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID, Tc) | 40 A | — |
| Continuous Drain Current (ID, Ta) | 6.5 A | — |
| Power Dissipation (PD, Tc) | 78 W | — |
| Technology | OptiMOS 2 (TrenchFET) | OptiMOS 5 |
| Packhaging | PG-TDSON-8-1 (TDSON-8) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | [DATA_NEEDED: VGS(th)] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total at VGS=10V] | [DATA_NEEDED: Qg] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (junction) | -55C to +150C |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| Series | OptiMOS 2 | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 74 W |