BSC265N10LSFGATMA1 vs BSC034N06NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC265N10LSFGATMA1 disebabkan oleh Infineon dan BSC034N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC265N10LSFGATMA1 BSC034N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID, Tc) 40 A —
Continuous Drain Current (ID, Ta) 6.5 A —
Power Dissipation (PD, Tc) 78 W —
Technology OptiMOS 2 (TrenchFET) OptiMOS 5
Kemasan PG-TDSON-8-1 (TDSON-8) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: VGS(th)]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total at VGS=10V] [DATA_NEEDED: Qg]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Gambaran Suhu Operasi -55 C to +150 C (junction) -55C to +150C
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Lead-Free Yes —
Avalanche Rated Yes —
Series OptiMOS 2 —
Polarity — N-Channel
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W

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