BSF134N10NJ3GXUMA1 vs BSC019N08NS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSF134N10NJ3GXUMA1 dari Infineon dan BSC019N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSF134N10NJ3GXUMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 100 V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TA=25°C | 9 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| Power Dissipation (PD) at TA=25°C | 2.2 W | — |
| Power Dissipation (PD) at TC=25°C | 43 W | — |
| Paket | MG-WDSON-2 (CanPAK M) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Terminal Position | Bottom | — |
| Terminal Finish | Silver Nickel | — |
| Rentang Suhu Kerja | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] | -55 C to +150 C |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 |
| Technology | Trench-gate OptiMOS planar | OptiMOS 5 (N-channel trench) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max value] | — |
| Body Diode Reverse Recovery | [DATA_NEEDED: trr value] | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.0 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| Avalanche Rated | — | Yes |